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The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime

The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime

Paperback

Technology & Engineering

ISBN10: 6209039553
ISBN13: 9786209039553
Publisher: LAP Lambert Academic Publishing
Published: Oct 9 2025
Pages: 120
Weight: 0.38
Height: 0.28 Width: 6.00 Depth: 9.00
Language: English
This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET. The heterostructure channel based on NanoFET consisting of mobility enriched double strained Si layers sandwiching the strained SiGe in between significantly enhances electron mobility in comparison to the conventional device of s-Si on relaxed SiGe channel MOSFET, leading to improved device performance without implementing any additional scaling.

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Technology & Engineering