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Wide Bandgap Semiconductor Spintronics

Wide Bandgap Semiconductor Spintronics

Hardcover

Technology & EngineeringPhysics

ISBN10: 9815129201
ISBN13: 9789815129205
Publisher: Jenny Stanford Publishing
Published: Apr 26 2024
Pages: 226
Weight: 1.08
Height: 0.56 Width: 6.00 Depth: 9.00
Language: English

This second edition of the book presents spintronic properties of III-V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state--an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig-Huges-Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number C =2.

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Litvinov, Vladimir

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Technology & Engineering