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Strain-Induced Effects in Advanced Mosfets

Strain-Induced Effects in Advanced Mosfets

Hardcover

Series: Computational Microelectronics, Book 0

Technology & Engineering

ISBN10: 3709103819
ISBN13: 9783709103814
Publisher: Springer
Published: Nov 24 2010
Pages: 252
Weight: 1.40
Height: 0.70 Width: 9.60 Depth: 6.70
Language: English
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

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Sverdlov, Viktor

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Technology & Engineering