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Strain-Engineered Mosfets

Strain-Engineered Mosfets

Paperback

Technology & Engineering

ISBN10: 1138075604
ISBN13: 9781138075603
Publisher: CRC Press
Published: Nov 22 2017
Pages: 320
Weight: 1.10
Height: 0.71 Width: 6.11 Depth: 9.21
Language: English

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale.

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