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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Silicon Carbide 2008 -- Materials, Processing and Devices: Volume 1069

Silicon Carbide 2008 -- Materials, Processing and Devices: Volume 1069

Dudley, Michael
Johnson, C. Mark
Powell, Adrian R.

Hardcover

Series: Mrs Proceedings

Technology & Engineering

ISBN10: 1605110396
ISBN13: 9781605110394
Publisher: Cambridge University Press
Published: Jul 31 2008
Pages: 298
Weight: 1.14
Height: 0.80 Width: 6.20 Depth: 9.20
Language: English
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

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