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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices

Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices

Lutz, Josef
Schlangenotto, Heinrich
Scheuermann, Uwe

Hardcover

Technology & Engineering

PREORDER - Expected ship date October 16, 2026

ISBN10: 3032156955
ISBN13: 9783032156952
Publisher: Springer
Published: Oct 16 2026
Pages: 565
Language: English
This new edition of the book Semiconductor Power Devices is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of the physical principles essential for understanding modern power devices. The complementation of the classical pn-theory regarding high-injection behavior and the description of emitters by H. Schlangenotto is now rounded off, displayed in newly written Sections. For IGBTs, new structures with strong carrier confinement are added. New are special chapters on SiC devices and GaN devices. In the SiC chapter, the bipolar mode of the MOSFET body diode and its reverse recovery is discussed for the first time.

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