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Research on the Radiation Effects and Compact Model of Sige Hbt

Research on the Radiation Effects and Compact Model of Sige Hbt

Paperback

Series: Springer Theses

Technology & EngineeringPhysics

ISBN10: 9811351813
ISBN13: 9789811351815
Publisher: Springer Nature
Published: Jan 4 2019
Pages: 168
Weight: 0.61
Height: 0.41 Width: 6.14 Depth: 9.21
Language: English
Nominated as an outstanding PhD dissertation by Tsinghua University, China Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with swift heavy ions instead of neutrons Presents an improved, high-frequency, small-signal model for SiGe HBTs taking into account the distribution characteristics

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