• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications

Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications

Hardcover

Series: Springer Advanced Microelectronics, Book 47

Technology & EngineeringPhysics

ISBN10: 9400776624
ISBN13: 9789400776623
Publisher: Springer Nature
Published: Oct 29 2013
Pages: 187
Weight: 1.03
Height: 0.50 Width: 6.14 Depth: 9.21
Language: English

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Ã…, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

Also in

Technology & Engineering