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Recent Advances in Pmos Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact

Recent Advances in Pmos Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact

Hardcover

Technology & EngineeringPhysics

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ISBN10: 9811661197
ISBN13: 9789811661198
Publisher: Springer Nature
Published: Nov 26 2021
Pages: 311
Weight: 1.42
Height: 0.75 Width: 6.14 Depth: 9.21
Language: English

This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses:

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