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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Progress in Soi Structures and Devices Operating at Extreme Conditions

Progress in Soi Structures and Devices Operating at Extreme Conditions

Balestra, Francis
Lysenko, Vladimir S.
Nazarov, Alexei N.

Paperback

Series: NATO Science Series II: Mathematics, Physics and Chemistry, Book 58

Technology & Engineering

ISBN10: 1402005768
ISBN13: 9781402005763
Publisher: Springer Nature
Published: Apr 30 2002
Pages: 351
Weight: 1.26
Height: 0.77 Width: 6.36 Depth: 9.42
Language: English
A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

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