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Power Gan Devices: Materials, Applications and Reliability

Power Gan Devices: Materials, Applications and Reliability

Hardcover

Series: Power Electronics and Power Systems

Technology & Engineering

Currently unavailable to order

ISBN10: 3319431978
ISBN13: 9783319431970
Publisher: Springer Nature
Published: Sep 22 2016
Pages: 380
Weight: 1.95
Height: 1.02 Width: 6.38 Depth: 9.52
Language: English

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

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