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Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications

Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications

Paperback

Technology & Engineering

ISBN10: 8132234901
ISBN13: 9788132234906
Publisher: Springer Nature
Published: Sep 17 2016
Pages: 134
Weight: 0.48
Height: 0.32 Width: 6.14 Depth: 9.21
Language: English

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

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