Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
612-822-4611

  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Non-polar III-Nitrides

Non-polar III-Nitrides

Imer, Bilge

Paperback

Technology & Engineering

ISBN10: 3639183185
ISBN13: 9783639183184
Publisher: Blues Kids Of Amer
Published: Aug 5 2009
Pages: 188
Weight: 0.62
Height: 0.43 Width: 6.00 Depth: 9.00
Language: English
III-Nitrides are used in wide range of electrical and optical products and applications including LEDs, LASERs, transistors, etc. However, they suffer from polarization fields when grown crystallographically along the c-direction. These fields result in poor carrier recombination efficiencies in quantum wells and shift in emission wavelength caused by QCSE due to spatial separation of the electron and hole wavefunctions. It is possible to eliminate these effects by growing along the nonpolar directions, so that the polarization fields are normal to the growth direction. However films grown along these nonpolar directions suffer from high defect densities. Consequently, device structures grown with these orientations suffer from poor electrical and optical characteristics. In this book these two issues were addressed so as to eliminate the polarization fields by nonpolar growth and to effectively reduce the high defect densities in films grown along the nonpolar directions employing a new growth technique called SLEO. Using this method it is possible to improve device performances with significantly higher external quantum efficiency.

Also in

Technology & Engineering

View All