Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Molecular Beam Epitaxy: Fundamentals and Current Status

Molecular Beam Epitaxy: Fundamentals and Current Status

Herman, Marian A.
Sitter, Helmut

Paperback

Series: Springer Materials Science, Book 7

Technology & EngineeringChemistry

ISBN10: 3642800629
ISBN13: 9783642800627
Publisher: Springer
Published: Oct 3 2013
Pages: 453
Weight: 1.46
Height: 0.96 Width: 6.14 Depth: 9.21
Language: English
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.

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