Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Ionizing Radiation Effects in Mos Devices and Circuits

Ionizing Radiation Effects in Mos Devices and Circuits

Ma, T. P.
Dressendorfer, Paul V.

Hardcover

Technology & EngineeringGeneral Science

ISBN10: 047184893X
ISBN13: 9780471848936
Publisher: Wiley-Interscience
Published: Apr 18 1989
Pages: 608
Weight: 2.09
Height: 1.35 Width: 6.58 Depth: 9.62
Language: English
This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.

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