Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
612-822-4611

  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Ion Implantation: Basics to Device Fabrication

Ion Implantation: Basics to Device Fabrication

Rimini, Emanuele

Hardcover

Series: The Springer International Engineering and Computer Science, Book 293

Technology & EngineeringChemistry

ISBN10: 0792395204
ISBN13: 9780792395201
Publisher: Springer Nature
Published: Dec 31 1994
Pages: 393
Weight: 1.64
Height: 0.94 Width: 6.14 Depth: 9.21
Language: English
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci- entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im- planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is- sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth- ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

1 different editions

Also available

Also in

Technology & Engineering

View All