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Integrated Electronics on Aluminum Nitride: Materials and Devices

Integrated Electronics on Aluminum Nitride: Materials and Devices

Hardcover

Series: Springer Theses

Technology & EngineeringPhysics

ISBN10: 3031171985
ISBN13: 9783031171987
Publisher: Springer
Published: Dec 7 2022
Pages: 255
Weight: 1.23
Height: 0.63 Width: 6.14 Depth: 9.21
Language: English
Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.

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