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Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures

Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures

Paperback

Series: Springer Materials Science, Book 26

Technology & Engineering

ISBN10: 3642781292
ISBN13: 9783642781292
Publisher: Springer Pg
Published: Dec 30 2011
Pages: 428
Weight: 1.35
Height: 0.90 Width: 6.00 Depth: 9.00
Language: English
Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the pope of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.

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