• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Gan Transistor Modeling for RF and Power Electronics: Using the Asm-Hemt Model

Gan Transistor Modeling for RF and Power Electronics: Using the Asm-Hemt Model

Paperback

Series: Woodhead Publishing Electronic and Optical Materials

Technology & Engineering

ISBN10: 0323998712
ISBN13: 9780323998710
Publisher: Woodhead Publishing
Published: May 22 2024
Pages: 260
Weight: 0.78
Height: 0.55 Width: 6.00 Depth: 9.00
Language: English

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.

Also in

Technology & Engineering