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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology

Kimoto, Tsunenobu

Hardcover

Series: IEEE Press

Technology & Engineering

ISBN10: 1118313526
ISBN13: 9781118313527
Publisher: Wiley-IEEE Press
Published: Nov 1 2014
Pages: 400
Weight: 2.15
Height: 1.20 Width: 6.70 Depth: 9.60
Language: English

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:

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