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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Paperback

Series: Topics in Applied Physics, Book 131

Technology & EngineeringPhysics

ISBN10: 9811512140
ISBN13: 9789811512148
Publisher: Springer Nature
Published: Mar 24 2021
Pages: 425
Weight: 1.35
Height: 0.89 Width: 6.14 Depth: 9.21
Language: English

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.

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