• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

Hardcover

Series: Springer Theses

Technology & EngineeringPhysics

ISBN10: 9811371067
ISBN13: 9789811371066
Publisher: Springer Nature
Published: Apr 15 2019
Pages: 147
Weight: 0.92
Height: 0.44 Width: 6.14 Depth: 9.21
Language: English

This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).

The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.

Also in

Technology & Engineering