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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
The Effects of Temperature and Electron Radiation on the Electrical Properties of Algan/Gan Heterostructure Field Effect Transistors

The Effects of Temperature and Electron Radiation on the Electrical Properties of Algan/Gan Heterostructure Field Effect Transistors

Moran, Jeffrey T.

Paperback

Technology & EngineeringPhysics

ISBN10: 128827341X
ISBN13: 9781288273416
Publisher: Biblioscholar
Published: Nov 9 2012
Pages: 122
Weight: 0.40
Height: 0.26 Width: 6.14 Depth: 9.21
Language: English

AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study, in recent years, owing to their highly desirable material and electrical properties, ruggedness, and survivability even during and after exposure to extreme temperature and radiation environments. These devices or similar devices constructed of AlGaN and/or GaN materials are being researched for their potential applications in many military and space based systems. In this study, unpassivated and SiN passivated Al0.27Ga0.73N/GaN HFETs were subjected to electron radiation at incident energies of 0.5MeV and 1.0MeV and fluences from 5x1014 to 5x1015 [e-/cm2] while maintained in a 10-6 Torr or higher vacuum at liquid nitrogen temperature (LN). The primary focus of the research was the effects of electron radiation and temperature on drain current, gate leakage current, threshold voltage shift, and gate-channel capacitance.

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