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Doping Engineering for Front-End Processing

Doping Engineering for Front-End Processing

Hardcover

Series: Mrs Proceedings

Technology & Engineering

ISBN10: 160511040X
ISBN13: 9781605110400
Publisher: Cambridge University Press
Published: Oct 17 2008
Pages: 336
Weight: 1.25
Height: 0.90 Width: 6.30 Depth: 9.20
Language: English
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

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