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Design and Modelling of Nanostructured Junctionless GAA FETs

Design and Modelling of Nanostructured Junctionless GAA FETs

Paperback

Technology & Engineering

ISBN10: 663010630X
ISBN13: 9786630106305
Publisher: LAP Lambert Academic Publishing
Published: Jun 23 2026
Pages: 148
Weight: 0.46
Height: 0.34 Width: 6.00 Depth: 9.00
Language: English
The book presents the design and modelling of Junctionless Semiconductor Gate-All-Around FETs developed using compound Semiconductors. The devices are designed with varying gate lengths from 20nm down to 10nm. The work mostly focuses on III-V semiconductors especially for trinary compounds such as InGaAs, InGaN and InGaP Nanowires. Electrical Parametric analysis is carried out for all the devices and compared with existing devices. Further, Temperature Analysis and performance of Junctionless Nanowire GAA FETs are analysed. Impact of Neutral Biomolecules on the semiconductor Nanowire devices are further analysed for biosensing applications.

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Technology & Engineering