• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Hardcover

Technology & EngineeringPhysics

ISBN10: 1786347156
ISBN13: 9781786347152
Publisher: World Scientific Publishing Europe Ltd
Published: Nov 18 2019
Pages: 404
Weight: 1.56
Height: 0.94 Width: 6.00 Depth: 9.00
Language: English

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.

Also in

Technology & Engineering