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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

Demkov, Alexander A.
Taylor, Bill
Harris, H. Rusty

Hardcover

Series: Mrs Proceedings

Technology & Engineering

ISBN10: 1605111287
ISBN13: 9781605111285
Publisher: Cambridge University Press
Published: Nov 19 2009
Pages: 194
Weight: 0.85
Height: 0.60 Width: 6.10 Depth: 9.20
Language: English
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

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