• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Chemical Mechanical Polishing Optimization for 4H-Sic

Chemical Mechanical Polishing Optimization for 4H-Sic

Hardcover

Technology & EngineeringPhysics

ISBN10: 1025111567
ISBN13: 9781025111568
Publisher: Hutson Street Press
Published: May 22 2025
Pages: 108
Weight: 0.73
Height: 0.31 Width: 6.14 Depth: 9.21
Language: English

Scratch free surfaces are required for substrates used in epitaxial growth. Silicon carbide (SiC) is a substrate material that is used in the epitaxial growth of SiC, GaN, and InGaN electronic devices. Preliminary chemical mechanical polishing (CMP) studies of 1 3/8 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time. Previous studies reported increased material removal rates associated with increasing polishing temperature, slurry pH, pressure, and polishing pad speed. In the current study, the effects of temperature, slurry pH, polishing pressure, and polishing pad speed were examined independently while keeping other polishing parameters constant. Material removal rates were determined using pre and post-polish wafer mass measurements. Photographs at specific wafer locations were obtained before and after each polishing period and compared to calculated removal rates.

1 different editions

Also available

Also from

Neslen, Craig L.

Also in

Technology & Engineering