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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion

Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion

Seebauer, Edmund G.
Kratzer, Meredith C.

Hardcover

Series: Engineering Materials and Processes

Technology & EngineeringGeneral SciencePhysics

ISBN10: 1848820585
ISBN13: 9781848820586
Publisher: Springer Nature
Published: Dec 1 2008
Pages: 298
Weight: 1.40
Height: 1.00 Width: 6.40 Depth: 9.40
Language: English

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of defect engineering. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Defects in Semiconductors details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

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