Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Characterization of Single Photon Avalanche Diode in CMOS Technology

Characterization of Single Photon Avalanche Diode in CMOS Technology

Khasin Yevgeny

Paperback

Business General

ISBN10: 3659507539
ISBN13: 9783659507533
Publisher: Lap Lambert Academic Pub
Published: Jan 3 2014
Pages: 136
Weight: 0.46
Height: 0.32 Width: 6.00 Depth: 9.00
Language: English
This research focuses on the design and characterization of a high performance single element of SPAD in state of the art standard deep sub-micrometer CMOS technology. This standard CMOS technology is the key factor of lowering the cost of the CMOS SPAD Imagers. Special effort was put on achieving the correct design for minimizing the detector's noise, which in SPADs termed as the Dark Count Rate (DCR), and maximizing its quantum efficiency, termed Photon detection efficiency (PDE). The tested designs were fabricated in standard 180nm CMOS technology. The electro-optical measurements and characterizations were accompanied with appropriate simulations that were made with computer software, as well as with theoretical analysis. In most cases, the simulations on the designs were made prior the fabrication, allowing focusing on designs of interest, which proved to achieve the best results, and further understanding of SPADs operation.

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