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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
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Advanced Physical Models for Silicon Device Simulation

Advanced Physical Models for Silicon Device Simulation

Schenk, Andreas

Paperback

Series: Computational Microelectronics

Technology & Engineering

ISBN10: 3709173345
ISBN13: 9783709173343
Publisher: Springer Nature
Published: Oct 21 2012
Pages: 354
Weight: 1.32
Height: 0.78 Width: 6.69 Depth: 9.61
Language: English
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys- ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of taylored quantum-mechanics. Each model is compared with experimental data and applied to a number of simulation exam- ples. The problems when starting from first principles and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.

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