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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability

Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability

Kim, Young-Hee
Lee, Jack C.

Paperback

Series: Synthesis Lectures on Solid State Materials and Devices

Technology & Engineering

ISBN10: 3031014243
ISBN13: 9783031014246
Publisher: Springer Nature
Published: Dec 31 2007
Pages: 92
Weight: 0.43
Height: 0.22 Width: 7.50 Depth: 9.25
Language: English
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.

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