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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Velichko, Oleg

Hardcover

Technology & EngineeringPhysics

ISBN10: 1786347156
ISBN13: 9781786347152
Publisher: World Scientific Publishing Europe Ltd
Published: Nov 18 2019
Pages: 404
Weight: 1.56
Height: 0.94 Width: 6.00 Depth: 9.00
Language: English
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

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