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3D Integration of Resistive Switching Memory

3D Integration of Resistive Switching Memory

Hardcover

Series: Frontiers in Semiconductor Technology

Technology & EngineeringGeneral Computers

ISBN10: 103248943X
ISBN13: 9781032489438
Publisher: Crc Pr Inc
Published: Apr 13 2023
Pages: 98
Weight: 0.60
Height: 0.31 Width: 5.50 Depth: 8.50
Language: English

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:

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