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Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

Paperback

General EducationGeneral SciencePhysics

ISBN10: 1249830826
ISBN13: 9781249830825
Publisher: Biblioscholar
Published: Oct 17 2012
Pages: 56
Weight: 0.20
Height: 0.12 Width: 6.14 Depth: 9.21
Language: English

The objective to this thesis was to improve the procedure for taking unltrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used mode-locked titanium sapphire (Ti: Saph) laser to excite the semiconductor sample and to upconvert the photoluminescene from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Ti: Saph laser 0.830 micron into 1.3 micron signal and 2.3 micron idler eams. Whereas the Ti: Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 micron. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provided.

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