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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

Uhlman, Troy A.

Paperback

General Education

ISBN10: 1249836565
ISBN13: 9781249836568
Publisher: Biblioscholar
Published: Oct 17 2012
Pages: 192
Weight: 0.78
Height: 0.41 Width: 7.44 Depth: 9.69
Language: English
In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).

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