Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
612-822-4611

  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence

Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence

Gray, Thomas E.

Paperback

Technology & EngineeringGeneral EducationPhysics

ISBN10: 1288308345
ISBN13: 9781288308347
Publisher: Biblioscholar
Published: Nov 16 2012
Pages: 126
Weight: 0.41
Height: 0.27 Width: 6.14 Depth: 9.21
Language: English

The gate current of Al27Ga73N/GaN heterogeneous field effect transistors (HFETs) is investigated using current-voltage (IV) and current-temperature (IT) measurement demonstrating that trap assisted tunneling (TAT) is the primary current mechanism. Excellent fit to experimental data is achieved using a thermionic trap assisted tunneling (TTT) model. A single value for each of the primary parameters (Schottky barrier height, trap energy, donor density and trap density) results in a sigma of 1.38x10-8 A for IT data measured at five voltages between 85K and 290K and for IV data measured at three temperatures between 0.0 V and -4.0 V. High energy (gt;0.5 MeV) neutron irradiation at fluences between 4.0x1010 and 1.2x1012 n/cm2 confirms an increase of gate current with fluence. A change in IV characteristics, interpreted as an increase in magnitude of threshold voltage, is also observed.

Also in

General Education

View All