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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

Hogsed, Michael R.

Paperback

Technology & EngineeringGeneral EducationPhysics

ISBN10: 1286861233
ISBN13: 9781286861233
Publisher: Biblioscholar
Published: Oct 26 2012
Pages: 206
Weight: 0.65
Height: 0.44 Width: 6.14 Depth: 9.21
Language: English

Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, the electrical and optical properties of 1.0 MeV electron irradiated n-AlxGa1-xN are characterized for aluminum mole fraction x = 0.0 to 0.3 using deep level transient spectroscopy (DLTS), temperature-dependent Hall, and cathodoluminescence (CL) measurements. Following irradiation of the AlGaN, it is found that four different electron traps are created, having energy levels within 0.4 eV below the conduction band edge. Three of these traps correspond to radiation-induced traps previously reported in GaN, and they are found to deepen significantly in the energy band gap with increase in aluminum mole fraction. The room temperature carrier concentration decreases following irradiation, and the carrier removal rate is found to depend foremost on the initial carrier concentration, regardless of the aluminum mole fraction. Also, following 1.0 MeV electron irradiation at a fluence of 1x1017 cm-2, the peak CL intensities of the samples are reduced, on average, by 50%. In spite of these findings, it is concluded that n-AlxGa1-xN is intrinsically more tolerant to radiation than conventional semiconductor materials such as GaAs and Si.

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