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Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments

Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments

Paperback

General EducationGeneral SciencePhysics

ISBN10: 1288405650
ISBN13: 9781288405657
Publisher: Biblioscholar
Published: Dec 5 2012
Pages: 80
Weight: 0.27
Height: 0.17 Width: 6.14 Depth: 9.21
Language: English

GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE), unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence.

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