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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Zhang, Rui-Qin

Paperback

Series: Springerbriefs in Molecular Science

Technology & EngineeringChemistryGeneral Science

ISBN10: 3642409040
ISBN13: 9783642409042
Publisher: Springer Nature
Published: Dec 5 2013
Pages: 66
Weight: 0.25
Height: 0.30 Width: 6.00 Depth: 8.90
Language: English

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

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