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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Electronic Structure of Metal-Semiconductor Contacts

Electronic Structure of Metal-Semiconductor Contacts

Mönch, Winfried

Paperback

Series: Perspectives in Condensed Matter Physics, Book 4

Technology & EngineeringChemistryGeneral Gardening

ISBN10: 9401067805
ISBN13: 9789401067805
Publisher: Springer Nature
Published: Sep 21 2011
Pages: 300
Weight: 1.10
Height: 0.65 Width: 6.69 Depth: 9.61
Language: English
Interface and surface science have been important in the development of semicon- ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor- insulator interfaces, heterojunctions between distinct semiconductors, and metal- semiconductor contacts. The latter ones stood almost at the very beginning of semi- conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

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