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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Technology of Gallium Nitride Crystal Growth

Technology of Gallium Nitride Crystal Growth

Ehrentraut, Dirk
Meissner, Elke
Bockowski, Michal

Hardcover

Series: Springer Materials Science, Book 133

Technology & EngineeringPhysics

ISBN10: 3642048285
ISBN13: 9783642048289
Publisher: Springer Nature
Published: Jun 24 2010
Pages: 326
Weight: 1.30
Height: 0.90 Width: 6.10 Depth: 9.20
Language: English
Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

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