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Solid State Device Physics (Second Edition)

Solid State Device Physics (Second Edition)

Paperback

Physics

Currently unavailable to order

ISBN13: 9798337089119
Publisher: American Academic Press
Pages: 90
Weight: 0.29
Height: 0.22 Width: 6.00 Depth: 9.00
Language: English

The Physics and 6 experiments of some electronic devices are documented in this book like never before (to our knowledge). The experiments are on room temperature I-V characteristics of npn Bipolar Junction Transistor (BJT) C828 in common base and in common emitter configurations; of n-channel Junction Field Effect transistor (n-JFET) 2N5457 in common source configuration; and on Unijunction Transistors (UJT) 2N494 and 2N493. The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics.

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Chowdhury, Sujaul

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Physics