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Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Semiconductor Device Physics for the Nanosheet Era: From Carriers and Junctions to Gate-All-Around Transistors, Wide-Bandgap Power, and Emerging Memor

Semiconductor Device Physics for the Nanosheet Era: From Carriers and Junctions to Gate-All-Around Transistors, Wide-Bandgap Power, and Emerging Memor

Paperback

Technology & EngineeringGeneral SciencePhysics

Currently unavailable to order

ISBN13: 9798192157015
Publisher: Independently Published
Pages: 506
Weight: 2.56
Height: 1.02 Width: 8.50 Depth: 11.00
Language: English

Silicon transistors just changed shape. As the industry moves from FinFETs to gate-all-around nanosheets, and as electric vehicles run on silicon carbide while data centers embed spin-transfer memory, most device physics courses are still teaching a picture that stopped in 2015. Semiconductor Device Physics for the Nanosheet Era rebuilds the subject from carrier statistics and the p-n junction all the way through to the transistors, power devices, and memory cells shipping today - in one consistent notation, with every derivation shown in full.

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