Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Plasma-enhanced atomic layer deposition of high-quality gallium nitrid

Plasma-enhanced atomic layer deposition of high-quality gallium nitrid

Liu, Sanjie
Zheng, Xinhe

Paperback

Film Guides & Reference

ISBN10: 6209554733
ISBN13: 9786209554735
Publisher: LAP Lambert Academic Publishing
Published: Feb 9 2026
Pages: 164
Weight: 0.50
Height: 0.38 Width: 6.00 Depth: 9.00
Language: English
This book investigates the processes and methods for preparing high-quality gallium nitride thin films on different substrates using plasma-enhanced atomic layer deposition technology. By introducing an aluminum nitride interlayer and nitrogen plasma pretreatment on silicon substrates, the oxygen impurity content in the films was significantly reduced, and the interface quality was improved. On sapphire substrates, high-quality single-crystal gallium nitride was epitaxially grown at low temperatures through a combination of baking and nitrogen plasma pretreatment. Polycrystalline gallium nitride films with sharp interfaces were directly deposited on quartz substrates, and their application in perovskite solar cells led to a substantial increase in conversion efficiency. This research provides important experimental foundation and methodological support for the controllable preparation of low-temperature, high-quality gallium nitride thin films and their applications in optoelectronic devices.

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