Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
612-822-4611

  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Leakage Current and Defect Characterization of Short Channel Mosfets

Leakage Current and Defect Characterization of Short Channel Mosfets

Roll, Guntrade

Paperback

Series: Research at Namlab, Book 2

Technology & EngineeringPhysics

Currently unavailable to order

ISBN10: 3832532617
ISBN13: 9783832532611
Publisher: Logos Verlag Berlin
Published: Nov 30 2012
Pages: 235
Weight: 0.55
Height: 0.48 Width: 5.68 Depth: 8.04
Language: English
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.

Also in

Physics

View All