Open Daily: 10am - 10pm | Alley door pickup 10am - 7pm 3038 Hennepin Ave Minneapolis, MN
612-822-4611

  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride

Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride

Claunch, Erin N.

Hardcover

Technology & EngineeringPhysics

ISBN10: 1025133137
ISBN13: 9781025133133
Publisher: Hutson Street Press
Published: May 22 2025
Pages: 68
Weight: 0.61
Height: 0.25 Width: 6.14 Depth: 9.21
Language: English

Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature. The ions were implanted at 200 keV with doses ranging from 1x10 13 to 1x10 15 cm -2 at room temperature. The samples were proximity cap annealed from 1200 to 1350 [degrees] C with a 500 Ã... thick AlN cap in a nitrogen environment. It has been found that the optical activation and implantation damage recovery are highly dependent upon ion dose and anneal temperature. The results of luminescence measurements on AlxGa1-xN made at 5 K by both photoluminescence and cathodoluminescence show that nearly complete implantation damage recovery can only be obtained after annealing at 1350 [degrees] C. The Si+N implanted GaN showed only a small amount of optical activation in the cathodoluminescence measurements at 1250 to 1350 [degrees] C. Mg doped GaN results indicated that optical activation of the Mg ions was not prevalent, and ion implantation damage might not have been removed completely at 1350 [degrees] C. The results also indicate that current AlN cap protected the implanted AlxGa1-xN layer very well during high temperature annealing without creating any significant annealing damage. These luminescence observations are consistent with the results of electrical activation studies made on these samples.

1 different editions

Also available

Also from

Claunch, Erin N.

View All

Also in

Physics

View All