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612-822-4611
Handbook for III-V High Electron Mobility Transistor Technologies

Handbook for III-V High Electron Mobility Transistor Technologies

Paperback

Technology & EngineeringPhysics

ISBN10: 0367729245
ISBN13: 9780367729240
Publisher: Crc Pr Inc
Published: Dec 18 2020
Pages: 444
Weight: 1.63
Height: 1.00 Width: 6.90 Depth: 9.90
Language: English

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

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