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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

Danylyuk, Yuriy

Paperback

General Computers

ISBN10: 3639030281
ISBN13: 9783639030280
Publisher: Blues Kids Of Amer
Published: Sep 10 2008
Pages: 124
Weight: 0.39
Height: 0.26 Width: 6.00 Depth: 9.00
Language: English
The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0

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