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Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Hardcover

Series: Springer Theses

Technology & EngineeringGeneral Science

ISBN10: 9811334439
ISBN13: 9789811334436
Publisher: Springer Nature
Published: Dec 12 2018
Pages: 102
Weight: 0.77
Height: 0.31 Width: 6.14 Depth: 9.21
Language: English

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known.

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